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Germanium Charge Plasma Double Gate Tunnel Field Effect Transistor with AL2O3 High-k Gate Dielectric: Design and Simulation

621.39
MAL

D1520

Malik, Sambhu Prasad Germanium Charge Plasma Double Gate Tunnel Field Effect Transistor with AL2O3 High-k Gate Dielectric: Design and Simulation / by Sambhu Prasad Malik. - Silchar : NIT , 2022
xix,44p;30cm * Electronics and Communication Engineering * Khosla, Robin * Title

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