VLSI fabrication principles: silicon and gallium arsenide Sorab K Ghandhi
Material type: TextLanguage: English Publication details: New Delhi Wiley India ( P) Limited 1994Edition: 2nd edDescription: xxiv, 834 p.;23 cmISBN:- 9788126517909
- 621.38171 GHA
Item type | Current library | Call number | Status | Date due | Barcode |
---|---|---|---|---|---|
Books | National Institute of Technology, Silchar | 621.38171 GHA (Browse shelf(Opens below)) | Available | 88744 | |
Books | National Institute of Technology, Silchar | 621.38171 GHA (Browse shelf(Opens below)) | Available | 88745 |
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621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38173 HOB Charge-transfer devices | 621.38173 SZE VLSI technology | 621.38173 SZE VLSI technology |
Includes bibliographical references and index
Orient Publishers
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