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Charge-transfer devices by G. S. Hobson
Material type:
TextLanguage: English Series: Contemporary elctronics and eletrical engineeringPublication details: London Edward 1978Description: xvi, 207pISBN: - 0-7131-3396-1
- 621.38173 HOB
| Item type | Current library | Call number | Status | Date due | Barcode |
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National Institute of Technology, Silchar | 621.38173 HOB (Browse shelf(Opens below)) | Available | 3979 |
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| 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38171 GHA VLSI fabrication principles: silicon and gallium arsenide | 621.38173 HOB Charge-transfer devices | 621.38173 SZE VLSI technology | 621.38173 SZE VLSI technology | 621.38173 SZE VLSI technology |
Includes index
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