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1.
Modelling and characteristics study of InAIN/AIN/GaN-based MOSHEMT for microwave frequency operation by Devashish Pandey by
  • Pandey, Devashish
  • Lenka, T.R
Material type: Map Map
Language: English
Dissertation note: National Institute of Technology M.Tech
Availability: Items available for loan: National Institute of Technology, Silchar (1)Call number: 621.38 PAN.

2.
DC and microwave characteristics study of InAIN/GaN HEMT by
  • Bhattacharjee, Abhishek
  • Lenka, T. R
Material type: Map Map
Language: English
Dissertation note: National Institute of Technology M.Tech
Availability: Items available for loan: National Institute of Technology, Silchar (1)Call number: 621.38 BHA.

3.
Leakage current analysis and RF characteristics of junctionless transistor by Dibyadrasta Sahoo by
  • Sahoo, Dibyadrasta
  • Lenka, T.R
Material type: Map Map
Language: English
Dissertation note: National Institute of Technology, Silchar M.Tech
Availability: Items available for loan: National Institute of Technology, Silchar (1)Call number: 621.38 SAH.

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