| 000 | 00739nam a2200229Ia 4500 | ||
|---|---|---|---|
| 008 | 160330s9999||||xx |||||||||||||| ||und|| | ||
| 020 |
_a9788126517909 _cRs. 579.00 |
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| 040 | _aCentral Library-NITS | ||
| 041 | _aEnglish | ||
| 082 |
_a621.38171 _bGHA |
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| 100 | _aGhandhi, Sorab K. | ||
| 245 |
_aVLSI fabrication principles: silicon and gallium arsenide _cSorab K. Ghandhi |
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| 250 | _a2nd ed | ||
| 260 |
_aNew Delhi _bWiley; Wiley India _c2012; 2013 |
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| 300 | _axxiv, 834 p. ; 23 cm | ||
| 504 | _aIncludes bibliographical references and index | ||
| 521 | _bSibyl, Kolkata; Orient Publications,Guwahati | ||
| 650 | _a2. Electronics and communication | ||
| 650 | _aVLSI | ||
| 650 | _aVLSI- fabrication and principles | ||
| 942 | _cBK | ||
| 999 |
_c20537 _d20537 |
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