| 000 | 00737nam a2200241Ia 4500 | ||
|---|---|---|---|
| 008 | 160330s9999||||xx |||||||||||||| ||und|| | ||
| 020 | _a9788126517909 | ||
| 040 | _aCentral Library-NITS | ||
| 041 | _aEnglish | ||
| 082 |
_a621.38171 _bGHA |
||
| 100 | _aGhandhi, Sorab K | ||
| 245 |
_aVLSI fabrication principles: silicon and gallium arsenide _cSorab K Ghandhi |
||
| 250 | _a2nd ed. | ||
| 260 |
_aNew Delhi _bWiley India ( P) Limited _c1994 |
||
| 300 | _axxiv, 834 p.;23 cm | ||
| 504 | _aIncludes bibliographical references and index | ||
| 521 | _bOrient Publishers | ||
| 650 | _aElectronics and communication | ||
| 650 | _aFabrication and principles | ||
| 650 | _aVLSI | ||
| 650 | _aVLSI- fabrication and principles | ||
| 942 | _cBK | ||
| 999 |
_c20895 _d20895 |
||