000			00545nem a2200169Ia 4500
008			160331s9999 xx 000 0 und d
040			_aNit, Silchar
041			_aEnglish
082			_a621.38 _bDEB
100			_aDeb, Soumen
245			_aModelling and simulation of a novel 24-nm asymmetric DMIDG MOSFET for low power application _cby Soumen Deb
300			_axiv, 149p.
502			_aNational Institute of Technology, Silchar _bM.Tech.
650			_aElectronics and Communication Engineering
700			_aBaishya, Srimanta
942			_cDE
999			_c23576 _d23576