000 | 00707npc a2200193Ia 4500 | ||
---|---|---|---|
005 | 20241029111553.0 | ||
008 | 160331s9999 xx 000 0 und d | ||
040 | _aCentral Library-NITS | ||
041 | _aEnglish | ||
082 |
_a 621.38154 _bPAT |
||
100 | _aPathak, Anushmita | ||
245 |
_aPhase change material with oxide layer: structural properties and electrical switching studies for emerging memory applications _cby Anushmita Pathak |
||
260 | _c2024 | ||
300 | _axxii, 110p.; 30cm | ||
500 | _aGuided by Shivendra Kumar Pandey | ||
502 |
_aNational Institute of technology, Silchar _bDoctor of Philosophy (Ph.D.) _d2024 |
||
650 | _aElectronics & Instrumentation Engineering | ||
942 | _cTH | ||
999 |
_c29869 _d29869 |