000 | 00632nam a2200193Ia 4500 | ||
---|---|---|---|
008 | 160330s9999||||xx |||||||||||||| ||und|| | ||
020 | _a0-07-065381-X | ||
040 | _aCentral Library-NITS | ||
041 | _aEnglish | ||
082 |
_a621.31463 _bTSI |
||
100 | _aTsividis, Yannis P. | ||
245 |
_aOperation and modeling of the mos transistor _cby Yannis P. Tsividis |
||
260 |
_aNew York _bMcGraw-Hill _c1987 |
||
300 | _axx,505p.:ill. | ||
440 | _aMcGraw-Hill series in electrical engineering. VLSI, electronics, and electronic circuits | ||
500 | _aIncludes index | ||
650 | _aMetal oxide semiconductors-Mathematical models | ||
942 | _cBK | ||
999 |
_c6073 _d6073 |