000 | 00633nam a2200217Ia 4500 | ||
---|---|---|---|
008 | 160330s9999||||xx |||||||||||||| ||und|| | ||
020 | _a0-07-100887-X | ||
040 | _aCentral Library-NITS | ||
041 | _aEnglish | ||
082 |
_a621.381522 _bROU |
||
100 | _aRoulston, David J. | ||
245 |
_aBipolar semiconductor devices _cby David J. Roulston |
||
260 |
_aNew York _bMcGraw-Hill _c1990 |
||
300 | _axxi, 422p. :ill. | ||
440 | _aMcGraw-Hill series in electrical engineering | ||
500 | _aIncludes index. | ||
650 | _aBipolar transistors | ||
650 | _aDidacs semiconductors-Design | ||
650 | _aInteagrated tansistors | ||
942 | _cBK | ||
999 |
_c6593 _d6593 |