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Design and modelling of III-Nitride/β-Ga2O3 Nano-HEMT for emerging THz and high power nanoelectronics applications

621.3
PUR

TH580

Purnachandrarao, G Design and modelling of III-Nitride/β-Ga2O3 Nano-HEMT for emerging THz and high power nanoelectronics applications / by G. Purnachandrarao. - , 2024
xxvi, 158p.; 30cm Guided by Trupti Ranjan Lenka * Electronics and Communication Engineering

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