Design and modelling of III-Nitride/β-Ga2O3 Nano-HEMT for emerging THz and high power nanoelectronics applications by G. Purnachandrarao
Material type:
Mixed materialsLanguage: English Publication details: 2024Description: xxvi, 158p.; 30cmSubject(s): DDC classification: - 621.3 PUR
| Item type | Current library | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
Thesis
|
National Institute of Technology, Silchar Central Library@NITS | 621.3 PUR (Browse shelf(Opens below)) | Available | TH580 |
Guided by Trupti Ranjan Lenka
National Institute of technology, Silchar Doctor of Philosophy (Ph.D.) 2024
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