Normal view MARC view ISBD view

Germanium Charge Plasma Double Gate Tunnel Field Effect Transistor with AL2O3 High-k Gate Dielectric: Design and Simulation by Sambhu Prasad Malik

By:

Contributor(s):

Material type: Map

MapLanguage: English Publication details: 2022 Silchar NIT Description: xix,44p;30cmSubject(s):

DDC classification:

Dissertation note: National Institute of Technology, Silchar Master of Technology 2022

Average rating: 0.0 (0 votes)

Holdings
Item type	Current library	Call number	Status	Date due	Barcode
Dissertation	National Institute of Technology, Silchar Central Library@NITS	621.39 MAL (Browse shelf(Opens below))	Available		D1520

Previous	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	No cover image available	Next
Previous	621.39 LAS Multiband Slot Antenna with EBG Structure for Wireless Applications	621.39 MAH Band Notched Characteristics using EBG Structure for UWB Antenna	621.39 MAH Handwritten character and Word Recognition using Deep learning.	621.39 MAL Germanium Charge Plasma Double Gate Tunnel Field Effect Transistor with AL2O3 High-k Gate Dielectric: Design and Simulation	621.39 MAN Millimeter-Wave MIMO Antenna for 5G Application.	621.39 NAI Customized Routing Algorithm for Timing Collateral Layout Tool	621.39 NAT Design of High Gain Low Power Preamplifier IC for Cochlear Implants	Next

National Institute of Technology, Silchar Master of Technology 2022

There are no comments on this title.

to post a comment.